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2SC3421
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Unit: mm * * * Complementary to 2SA1358 Suitable for driver of 60 to 80 watts audio amplifier High breakdown voltage
Absolute Maximum Ratings (Tc = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 1 100 1.5 10 150 -55 to 150 Unit V V V A mA W C C
JEDEC JEITA

TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2SC3421
Electrical Characteristics (Tc = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min 120 80 Typ. 0.30 0.78 120 15 Max 100 100 240 1.0 1.0 V V MHz pF Unit nA nA V
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Lot No.
Characteristics indicator
C3421
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Part No. (or abbreviation code)
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2SC3421
IC - VCE
1200 Common emitter 1000 25 Tc = 25C 16 10 800 7 5 4 400 3 2 200 IB = 1 mA 0 2 4 6 8 10 12 14 500 300
hFE - IC
Common emitter VCE = 5 V
DC current gain hFE
Tc = 100C 25 -25 50 30
(mA)
100
Collector current IC
600
10
3
10
30
100
300
1000
Collector current IC
(mA)
0 0
Collector-emitter voltage
VCE (V)
VCE (sat) - IC
1 1000 Common emitter 0.5 0.3 IC/IB = 10 Common emitter VCE = 5 V 800
IC - VBE
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC
(mA)
Tc = 100C 25
0.1 0.05 0.03
600
-25
400
Tc = 100C
25
-25
200
0.01
3
10
30
100
300
1000 0 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector current IC
(mA)
Base-emitter voltage
VBE (V)
Safe Operating Area
3000
PC - Ta
12
IC max (pulsed)* IC max (continuous)* 100 ms*
1 ms* 10 ms*
(W)
10
(mA) Collector current IC
(1)
(1) Tc = Ta Infinite heat sink (2) No heat sink
1000 500 300
Collector power dissipation PC
8
DC operation Tc = 25C 100 50 30 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature 3 10 30 100
6
4
2
(2)
VCEO max 300
0 0
20
40
60
80
100
120
140
160
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
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2SC3421
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-09

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